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High electron mobility transistor lightwave receiver for broad-band optical transmission system applications

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4 Author(s)
Walker, S.D. ; British Telecom Res. Lab., Ipswich, UK ; Blank, L.C. ; Garnham, R.A. ; Boggis, J.M.

The design and construction of a broadband transimpedance lightwave receiver which features packaged, commercially available high-electron-mobility transistors is described. The receiver was constructed on a standard teflon printed circuit board with packaged tailed 30- mu m-diameter germanium avalanche photodiode as photodetector. A sensitivity of -25.5 dBm for 10/sup -9/ bit error rate was achieved at 1.31 mu m with a 5-Gb/s nonreturn-to-zero pseudorandom sequence provided by a commercial data generator and 1:4 analog demultiplexing at the receiver output.<>

Published in:

Lightwave Technology, Journal of  (Volume:7 ,  Issue: 3 )