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High-speed, 100+W RF switches using GaAs MMICs

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4 Author(s)
Katzin, P. ; Hittite Microwave Corp., Woburn, MA, USA ; Bedard, B.E. ; Shifrin, M.B. ; Ayasli, Y.

A low-loss, inductive gate bias network structure which allows a very high stacking level of FET devices for high-power RF switching applications is reported. The design, implementation, and performance of S- and C-band SPDT switches based on this structure are described. Multiple GaAs MMIC chips integrated into a suspended-substrate hybrid circuit are used. At S-band, switch risetimes/falltimes of less than 40 ns and an RF power handling capability of 300 W CW have been demonstrated. This input signal level could be maintained during the switch state transitions (hot-switching), while being switched between the two output ports at rates of up to 500 kHz

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:40 ,  Issue: 11 )