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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:39 Issue:12 Help

An analytical model for floating-gate MOSFET including the effects of the overlapping capacitance

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2 Author(s)
Manku, T. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; Heasell, E.L.

An analytical model for the current-voltage characteristics of a floating-gate MOSFET are developed. The effects of the overlapping capacitance are included. The model was tested on experimental data obtained from fabricated devices. Good agreement was observed between measurement results and the model

Published in:
Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 12 )

Date of Publication: Dec 1992

Page(s):
2821 - 2823
ISSN :
0018-9383
INSPEC Accession Number:
4338352
Digital Object Identifier :
10.1109/16.168737
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Dec 1992
Sponsored by :
IEEE Electron Devices Society

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