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Abstract—A 1024-word by 80-digit exploratory plated-wire store using diode-matrix word selection has a cycle time of 100 ns or less for READ and 140 ns for WRITE, while the destructive READWRITE asts 150 to 200 ns. To match the fluctuation in the type of request encountered, typically 80 percent READ, and thus maximize the throughput, it is advantageous to switch memory mode in an interlaced manner at logic speed. This is done by exploiting the plated-wire properties of NDRO and fast WRITE. A charge storage diode is used for memory protection and common word current control; READ 400 mA, WRITE 900 mA.