Referenced Items are not available for this document.
Important aspects and simulation results related to the RF integrated circuit design of a single-ended low-noise amplifier (LNA) are presented and discussed. The simulated values for the power consumption, input-IP3 and noise figure (NF) are 10mW, 0.32dBm and 1.53dB, at the center frequency fc = 5.5GHz, respectively. An experimentally extensively verified design kit for a 0.25mum BiCMOS technology is used for all components and devices except for the inductors, which are assumed to be ideal. A well established CMOS LNA circuit topology was chosen, completely re-dimensioned and optimized to meet the desired design specifications for WLAN 802.11a
Published in:
Information and Communication Technologies, 2006. ICTTA '06. 2nd
(Volume:2
)
Date of Conference: 0-0 0
- Page(s):
- 2577 - 2582
- Print ISBN:
- 0-7803-9521-2
- INSPEC Accession Number:
- 9061924
- Conference Location :
- Damascus
- Digital Object Identifier :
- 10.1109/ICTTA.2006.1684815
- Product Type:
- Conference Publications
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