By Topic

Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Zebrev, G.I. ; Dept. of Microelectron., Moscow Eng. Phys. Inst. ; Pavlov, D.Y. ; Pershenkov, V.S. ; Nikiforov, A.Y.
more authors

A new analytical model for enhanced yield of radiation-induced charge in low-field thick oxides due to lesser recombination under low-dose-rate and high temperature conditions has been developed. Numerical simulations are quantitatively well agreed with experimental data

Published in:

Nuclear Science, IEEE Transactions on  (Volume:53 ,  Issue: 4 )