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Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

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8 Author(s)
G. I. Zebrev ; Dept. of Microelectron., Moscow Eng. Phys. Inst. ; D. Y. Pavlov ; V. S. Pershenkov ; A. Y. Nikiforov
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A new analytical model for enhanced yield of radiation-induced charge in low-field thick oxides due to lesser recombination under low-dose-rate and high temperature conditions has been developed. Numerical simulations are quantitatively well agreed with experimental data

Published in:

IEEE Transactions on Nuclear Science  (Volume:53 ,  Issue: 4 )