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Influence of Laser Pulse Duration in Single Event Upset Testing

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6 Author(s)
Douin, A. ; CNRS UMR 5818, Bordeaux I Univ. ; Pouget, V. ; Darracq, F. ; Lewis, D.
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Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100 mus. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically

Published in:

Nuclear Science, IEEE Transactions on  (Volume:53 ,  Issue: 4 )

Date of Publication:

Aug. 2006

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