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Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology

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11 Author(s)
D. R. Ball ; Inst. for Space & Defense Electron., Nashville, TN ; K. M. Warren ; R. A. Weller ; R. A. Reed
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The interaction between a heavy ion and the overlayer materials in an integrated circuit may result in a nuclear reaction. This reaction leads to a charge generation profile that is substantially altered from the profile generated during a direct ionization event. In this work, nuclear reactions are integrated into the modeling of the SEU response of an SRAM cell using GEANT4-based simulations. The simulated transient response is compared to the response obtained using a typical heavy ion model that includes only direct ionization

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IEEE Transactions on Nuclear Science  (Volume:53 ,  Issue: 4 )