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Notice of Violation of IEEE Publication Principles
"A 12.5 Gb/s Electro-Absorption-Modulator Driver Using an Adaptive Compensated Push-Pull Emitter Follower and a Cascode Output Switch With Dynamic Headroom Allocation"
by Maxim, A.
in the IEEE Journal of Solid-State Circuits,
Volume 41, Issue 9, Sept. 2006 Page(s):2127 - 2143
After careful and considered review, it has been determined that the above paper is in violation of IEEE's Publication Principles.
Specifically, the paper contains information that Adrian Maxim admits had been falsified. In response to an inquiry on this misconduct, Mr. Maxim acknowledged that the following people who have been listed as co-authors on several of his papers are fabricated names and that he is the only author:
C. Turinici,D. Smith, S. Dupue
Additionally, in papers by Mr. Maxim that have co-authors other than those listed above, it was discovered in some cases that he had not consulted with them while writing the papers, and submitted papers without their knowledge.
Although Mr. Maxim maintains that not all of the data is falsified, IEEE nevertheless cannot assure the integrity of papers posted by him because of his repeated false statements.
Due to the nature of this violation, reasonable effort should be made to remove all past references to the above paper, and to refrain from any future references.A 9.953-12.5 Gb/s EAM driver IC was realized in a 60 GHz fT 0.2 mum SOI SiGe HBT process. Fast switching was achieved by using a cascode output switch that minimizes the capacitive load on the pre-driver and also allows an on-chip summation of the bias and modulation currents without degrading the signal path bandwidth. Low voltage operation was achieved by generating the modulation current with a common-mode feedback loop. Dynamic biasing was used to optimally allocate the headroom voltage between the switch and its cascode devices over supply, temperature, bias- and modulation corners. An adaptive RC compensation that tracks the modulation current was implemented to cancel the inductive behavior of the last emitter follower stage. The EAM driver specifications include 20 to 120 mA modulation current range, 1 to 60 mA bias current range, <15 pspp deterministic jitter, <25 ps rise/fall time, plusmn80 ps pulse-width adjustment, 4.75 to 5.5 V supply voltage and 1.3times1.7 mm2 die area