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A Capless \hbox {InP/}\hbox {In}_{0.52}\hbox {Al}_{0.48}\hbox {As/}\hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As} p-HEMT Having a Self-Aligned Gate Structure

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3 Author(s)
T. -W. Kim ; Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol. ; S. J. Jo ; J. I. Song

Characteristics of a 0.2-mum capless InAlAs/InGaAs pseudomorphic high electron mobility transistor (p-HEMT) having a self-aligned gate (SAG) were investigated. The 0.2-mum SAG capless p-HEMT showed a source resistance comparable to that of a conventional recessed p-HEMT having a heavily n-doped In0.53Ga0.47As cap layer primarily due to the SAG and optimized ohmic-metallization processes and excellent characteristics of Gm,max, fT, and fmax of 1.12 S/mm, 185 GHz, and 225 GHz, respectively, even without a heavily doped InGaAs cap layer. The capless device exhibited much better device parameters for digital logic applications including I ON/IOFF and subthreshold slope (1.27times104 and 78 mV/dec) compared with those (5.1times103 and 120 mV/dec) of the conventional recessed device, respectively

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IEEE Electron Device Letters  (Volume:27 ,  Issue: 9 )