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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

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6 Author(s)
Dora, Y. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA ; Chakraborty, A. ; McCarthy, L. ; Keller, S.
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A self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs. Devices were tested in Fluorinert to eliminate the breakdown of air, which was identified to limit the breakdown voltage in AlGaN/GaN HEMTs. A single integrated field plate, which is self-aligned with the gate, is shown to support more than a kilovolt breakdown voltage (Vbr up to 1900 V was measured with Fluorinert). Devices made with this technology show a good large signal-frequency behavior. Various issues regarding breakdown measurements and interpretation of measurement results are presented

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Electron Device Letters, IEEE  (Volume:27 ,  Issue: 9 )