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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:18 Issue:18 Help

Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3 \mu m

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6 Author(s)
Geerlings, E. ; Fraunhofer Inst. for Appl. Solid State Phys., Freiburg ; Rattunde, M. ; Schmitz, J. ; Kaufel, G.
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We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum

Published in:
Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 18 )

Date of Publication: Sept.15, 2006

Page(s):
1913 - 1915
ISSN :
1041-1135
INSPEC Accession Number:
9082717
Digital Object Identifier :
10.1109/LPT.2006.881658
Product Type:
Journals & Magazines
Date of Current Version :
23 October 2006
Issue Date :
Sept.15, 2006
Sponsored by :
IEEE Photonics Society

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