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A Low-Power, X -Band SiGe HBT Low-Noise Amplifier for Near-Space Radar Applications

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7 Author(s)
Wei-Min Lance Kuo ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA ; Krithivasan, R. ; Xiangtao Li ; Yuan Lu
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A low-power, X-band low-noise amplifier (LNA) is presented. Implemented with 180 GHz silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs), the circuit occupies 780times660 mum2. The LNA exhibits a gain of 11.0 dB at 9.5 GHz, a mean noise figure of 2.78 dB across X-band, and an input third-order intercept point of -9.1 dBm near 9.5 GHz, while dissipating only 2.5 mW. The low-power performance of this LNA, together with its natural total-dose radiation immunity, demonstrates the potential of SiGe HBT technology for near-space radar applications

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:16 ,  Issue: 9 )

Date of Publication:

Sept. 2006

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