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RFIC TaN/SrTiO _3/ TaN MIM Capacitors With 35fF \mu\hbox {m}^{2} Capacitance Density

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5 Author(s)
Huang, C.C. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu ; Chiang, K.C. ; Kao, H.L. ; Chin, Albert
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A very high density of 35 fF/mum2 is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa=169) SrTiO3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100kHz to 10GHz, low leakage current of 1times10-7 A/cm2 at 1V are simultaneously measured. The small voltage dependence of a capacitance DeltaC/C of 637ppm is also obtained at 2GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:16 ,  Issue: 9 )