RFIC TaN/SrTiO$_3/$TaN MIM Capacitors With 35fF$/muhboxm^2$Capacitance Density

A very high density of 35
$hboxfF/muhboxm^2$
is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-
$kappa (kappa=hbox169)$
$hboxSrTiO_3$
fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100kHz to 10GHz, low leakage current of 1
$times hbox10^-7 hboxA/cm^2$
at 1V are simultaneously measured. The small voltage dependence of a capacitance
$Delta C/C$
of 637ppm is also obtained at 2GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.