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3 S/mm extrinsic transconductance of InP-based high electron mobility transistor by vertical and lateral scale-down

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4 Author(s)
H. Matsuzaki ; NTT Photonics Labs., NTT Corp., Atsugi, Japan ; T. Maruyama ; T. Enoki ; M. Tokumitsu

Record extrinsic transconductance (gmext) of 3 S/mm at room temperature for an InP-based high electron mobility transistor with an In0.53Ga0.47As/InAs composite channel is reported. Markedly enhanced gmext was achieved by reducing a gate-to-channel distance for improving intrinsic transconductance and a gate-to-ohmic distance for minimising series source resistance.

Published in:

Electronics Letters  (Volume:42 ,  Issue: 15 )