By Topic

New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional Simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kumar, M.J. ; Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi ; Bahl, H.

A new Schottky-gate bipolar-mode field-effect transistor (SBMFET) is proposed and verified by a two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep-diffused p+ regions as the gate, the proposed device uses the Schottky gate formed on the silicon planar surface for injecting the minority carriers into the drift region. The SBMFET is demonstrated to have an improved current-gain, identical breakdown voltage, and on-voltage drop when compared to the conventional BMFET. Since the fabrication of the SBMFET is much simpler and obliterates the need for deep thermal diffusion of p + gates, the SBMFET is expected to be of great practical importance in medium-power high-current switching applications

Published in:

Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 9 )