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A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region

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4 Author(s)
Jin He ; Nanoscale Device & Circuit Group, Beijing ; Chan, M. ; Xing Zhang ; Yangyuan Wang

A physics-based analytic solution to the surface potential from the accumulation to the strong-inversion region has been derived from the complete MOSFET surface potential equation in this paper without any need for smooth functions or simplification by dropping some second-order related terms. Its high accuracy in predicting the surface potential and the transcapacitance under various bias conditions has also been verified by a comparison with the numerical results. The explicit surface-potential solution not only leads to a more clear understanding of MOSFET device physics but also provides a better platform to develop the advanced surface potential-based model for the circuit simulation

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Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 9 )