Cart (Loading....) | Create Account
Close category search window
 

Effect of processing temperature on polysilicon thin film transistors for active matrix LCDs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Mitra, U. ; North American Philips Corp., Briarcliff Manor, NY, USA ; Khan, B. ; Venkatesan, M. ; Stupp, E.H.

The effect of processing conditions on polysilicon TFT (thin-film transistor) performance is explained. By careful selection of process techniques excellent devices are obtained, independent of processing temperature. It is possible to fabricate polysilicon TFTs at low temperature with performance comparable to that of high-temperature TFTs by replacing the high-temperature steps with low-temperature steps which have the same effect on the material and device structure. These TFTs are used in full-resolution LCDs (liquid crystal displays) for projection television.<>

Published in:

Display Research Conference, 1991., Conference Record of the 1991 International

Date of Conference:

15-17 Oct. 1991

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.