Referenced Items are not available for this document.
In deep submicrometer technologies, increased standby leakage current in high-performance processors results in increased junction temperature. Elevated junction temperature causes further increase on the standby leakage current. The standby leakage current is expected to increase even more under the burn-in environment leading to still higher junction temperature and possibly the thermal runaway. In this paper, for the first time the concept of thermal runaway and the conditions that lead to thermal runaway is described. Also, the thermal management of high-performance microprocessors to avoid thermal runaway is investigated
Published in:
Device and Materials Reliability, IEEE Transactions on
(Volume:6
,
Issue:
2
)
Date of Publication: June 2006
- Page(s):
- 300 - 305
- ISSN :
- 1530-4388
- INSPEC Accession Number:
- 9039599
- Digital Object Identifier :
- 10.1109/TDMR.2006.876577
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 14 August 2006
- Issue Date :
- June 2006
- Sponsored by :
- IEEE Electron Devices Society
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