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Moisture influence on porous low-k reliability

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2 Author(s)
Michelon, J. ; Philips Res. Leuven ; Hoofman, R.J.O.M.

In this paper, the impact of moisture on the reliability of porous low-k materials has been investigated. It was found that moisture uptake is higher for more porous SiOC low-k materials, and its presence inside the low-k has a strong impact on the dielectric reliability. It has been demonstrated that by eliminating moisture, the leakage current can be significantly decreased; in addition, higher breakdown electric fields and longer dielectric lifetimes can be achieved. Therefore, integration of porous low-k materials requires maximum attention to prevent moisture uptake at each step during integration; in addition, the passivation layers need to be perfectly hermetic in order to maintain good dielectric reliability

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:6 ,  Issue: 2 )

Date of Publication:

June 2006

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