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Observations of NBTI-induced atomic-scale defects

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4 Author(s)
Campbell, J.P. ; Univ. Park, Pennsylvania State Univ., University Park, PA ; Lenahan, P.M. ; Krishnan, A.T. ; Krishnan, Srikanth

A combination of MOSFET gate-controlled diode measurements and a very sensitive electron spin resonance technique called spin-dependent recombination was utilized to observe and identify defect centers generated by a negative bias temperature stress in fully processed SiO 2-based pMOSFETs. In SiO2 devices, the defects include two Si/SiO2 interface silicon dangling bond centers (Pb0 and Pb1) and may also include an oxide silicon dangling bond center (E'). The observations indicate that both P b0 and Pb1 defects play major roles in these SiO 2-based devices and suggest that E' centers could play an important role

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:6 ,  Issue: 2 )

Date of Publication:

June 2006

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