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Influence of \hbox {O}_{2} Flow Rate on Structure and Properties of \hbox {MgO}_{x} Films Prepared by Cathodic-Vacuum-Arc Ion Deposition System

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7 Author(s)
Changxi Zheng ; State Key Lab. of Optoelectron. Mater. & Technol., Guangzhou ; Daoyun Zhu ; Dihu Chen ; Zhenhui He
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Magnesium-oxide (MgOx) films have been prepared by a cathodic-vacuum-arc ion deposition system operated in an intermediate frequency pulse mode of substrate bias voltage at a mixed atmosphere of O2 and Ar. The O2 flow was adjusted in a range of 180-240 sccm at a fixed O2/Ar flow rate of 20. The structure, composition, morphology, and optical properties of the samples were analyzed by X-ray diffraction, Rutherford backscattering technique, atomic force microscopy, and UV-visible absorption spectra, respectively. Results show that the crystal orientation and grain size of the samples strongly depends on O2 flow rate. Growth of Magnesium-oxide films prefers MgO (200) and MgO (220) orientation at a smaller and larger O2 flow rate of 180 and 220 sccm, respectively. Transparent MgOx films used as the protective layer for alternating-current plasma display panel are obtained at optimal deposition conditions

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Plasma Science, IEEE Transactions on  (Volume:34 ,  Issue: 4 )