By Topic

10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yu-Sheng Liao ; Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu ; Gong-Ru Lin ; Hao-Chung Kuo ; Kai-Ming Feng
more authors

The SONET OC-192 receiving performance of In0.53Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate is reported. With a low-cost TO-46 package, such a device exhibits a frequency bandwidth up to 8 GHz, a bit-error rate (BER) of 10 -9 at 10 Gb/s, a sensitivity of -17.8 dBm, and a noise equivalent power of 3.4times10-15 W/Hz1/2 owing to its ultralow dark current of 3.6times10-7 A/cm2 . Eye diagram analysis at 10 Gb/s without transimpedance amplification reveals a statistically distributed Q-factor of 8.21, corresponding to a minimum BER of 1.1times10-16 at receiving power of -6 dBm

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 17 )