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Schottky Source/Drain MOSFETs on SiGe on Insulator with high-K gate dielectric and TaN gate electrode

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6 Author(s)
Fei Gao ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore ; Li, M.F. ; Chi, D.Z. ; Balakumar, S.
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We report thin SGOI (silicon germanium on insulator) with 65% Ge concentration p-MOSFET (metal-oxide-semiconductor-field-effect-transistor) using Ni-germanosilicide Schottky S/D (source/drain) and HfO2/TaN gate stack integrated with conventional self-aligned top gate process. Unlike high temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic, low gate leakage current and hence, well-behaved transistor performance. In addition, SOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current of the MOSFET

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Junction Technology, 2006. IWJT '06. International Workshop on

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