Cart (Loading....) | Create Account
Close category search window
 

Schottky Source/Drain MOSFETs on SiGe on Insulator with high-K gate dielectric and TaN gate electrode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Fei Gao ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore ; Li, M.F. ; Chi, D.Z. ; Balakumar, S.
more authors

We report thin SGOI (silicon germanium on insulator) with 65% Ge concentration p-MOSFET (metal-oxide-semiconductor-field-effect-transistor) using Ni-germanosilicide Schottky S/D (source/drain) and HfO2/TaN gate stack integrated with conventional self-aligned top gate process. Unlike high temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic, low gate leakage current and hence, well-behaved transistor performance. In addition, SOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current of the MOSFET

Published in:

Junction Technology, 2006. IWJT '06. International Workshop on

Date of Conference:

0-0 0

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.