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Tuning of Schottky barrier heights by silicidation induced impurity segregation

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4 Author(s)
Zhao, Q.T. ; Institut fur Schichten und Grenzflachen, Forschungszentrum Julich ; Zhang, M. ; Knoch, J. ; Mantl, S.

Schottky barrier height engineering by silicidation induced impurity segregation is demonstrated. The segregation of sulfur at the NiSi/Si interface leads to a gradual decrease of the SBH on n-Si(100) from 0.65 eV to 0.07 eV, and correspondingly, to an increase of the SBH on p-Si(100). Alternatively, the effective SBH of NiSi is reduced by As and B segregation during silicidation. Using these techniques, SB-MOSFETs were fabricated. The transistors with impurity segregation at source/drain to the silicon channel show significant performance improvements

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Junction Technology, 2006. IWJT '06. International Workshop on

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