Referenced Items are not available for this document.
We took HX-PES measurement (Si 1s) on silicon samples doped by plasma doping (PD) for the first time before and after annealing using either spike RTA or flash lamp anneal (FLA) in SPring-8. After PD, the carrier density of n-Si substrate decreased to intrinsic Si level due to defect induced carrier traps. After annealing, the results revealed that the chemical binding states of the doped samples were well recovered showing high impurity activation
Published in:
Junction Technology, 2006. IWJT '06. International Workshop on
Date of Conference: 0-0 0
- Page(s):
- 116 - 119
- Print ISBN:
- 1-4244-0047-3
- INSPEC Accession Number:
- 9097173
- Conference Location :
- Shanghai
- Digital Object Identifier :
- 10.1109/IWJT.2006.220874
- Product Type:
- Conference Publications
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