Cart (Loading....) | Create Account
Close category search window
 

Molecular Dynamic Simulation on Boron Cluster Implantation for Shallow Junction Formation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Li Yuan ; Inst. of Microelectron., Peking Univ., Beijing ; Wei Li ; Min Yu ; Huihui Ji
more authors

A molecular dynamic method for cluster implantation simulation which is a potential technology for shallow junction formation in integrated circuits manufacture, aimed at microelectronics application, is presented in this paper. Accurate geometric structures of boron clusters including H atoms are described by the model. A potential function taking a form of combining the ZBL and the SW potentials is applied to model interaction among the atoms in the boron cluster. Simulations of B monomer, B10H14 and B18H22 are performed. The distributions of both B and H in monomer and cluster implantation are verified by SIMS data. It is notable that with the cluster model presented, the simulation can reproduce the difference of monomer and cluster implantation very well

Published in:

Junction Technology, 2006. IWJT '06. International Workshop on

Date of Conference:

0-0 0

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.