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Wideband quantum-dash-in-well superluminescent diode at 1.6 μm

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3 Author(s)
Djie, H.S. ; Electr. & Comput. Eng. Dept., Lehigh Univ., Bethlehem, PA ; Dimas, C.E. ; Ooi, B.S.

We demonstrate broadband superluminescent diode at ~1.6-mum peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 degC under 8 kA/cm2

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 16 )