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The characterization of all-optical 3R regeneration based on InP-related semiconductor optical devices

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10 Author(s)
Young Ahn Leem ; Div. of Opt. Metrol., Korea Adv. Energy Res. Inst., Daejeon, South Korea ; Dong Churl Kim ; Eundeok Sim ; Sung-Bock Kim
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We report characterization and experimental realization of recent InP-related semiconductor optical devices for all-optical 3R regeneration. A Mach-Zehnder interferometric wavelength converter (MZ IWC) with preamplifiers gives an extinction ratio (ER) improvement and a negative power penalty for all-optical reamplification and reshaping (2R) of pseudorandom bit sequence (PRBS) nonreturn-to-zero (NRZ) data at 10 Gb/s. In addition, we briefly describe the mechanism for injection locking of the multisection laser diode with a distributed feedback (DFB) reflector. Using this device, we demonstrate clock recovery from PRBS return-to-zero (RZ) and NRZ data. The achieved rms timing jitter is less than 1 ps for the input of 11.727 Gb/s PRBS RZ and NRZ. All-optical 3R regeneration leads to a good performance using the MZ IWC and multisection DFB LD. The combination of these functions provides all-optical 3R regeneration with NRZ to RZ conversion. For the realization of a small and compact 3R regeneration module, we propose the hybrid module packaging process, which is composed of 2R and 1R semiconductor chip in single butterfly-type module

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IEEE Journal of Selected Topics in Quantum Electronics  (Volume:12 ,  Issue: 4 )