By Topic

20m Ω cm2660V Super Junction MOSFETs Fabricated by Deep Trench Etching and Epitaxial Growth

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Takahashi, K. ; Fuji Electr. Adv. Technol. Co., Ltd., Nagano ; Kuribayashi, H. ; Kawashima, T. ; Wakimoto, S.
more authors

600V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth method are numerically and experimentally investigated. By applying a p-type ion implantation to its termination region, a breakdown voltage (VB) of the fabricated SJ-MOSFETs successfully increased by 150V. The fabricated SJ-MOSFET shows an extremely small specific on-resistance (RonA) of 19.8mOmegacm2 at the breakdown voltage of 658V. This characteristic is lower than any other reported trench-filling type devices in the same voltage class

Published in:

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Date of Conference:

4-8 June 2006