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Investigations of all lead free IGBT module structure with low thermal resistance and high reliability

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4 Author(s)
Nishimura, Y. ; Fuji Electr. Device Technol. Co., Ltd., Nagano ; Morozumi, A. ; Mochizuki, E. ; Takahashi, Y.

This paper presents all lead free IGBT module structure with low thermal resistance and high reliability. Using thick copper foil alumina DCB, Sn/Ag/In solder, and copper base, we have achieved low thermal resistance as same as the current aluminum nitride (AlN) IGBT module structure. In addition to low thermal resistance, this new structure shows excellent temperature cycling capability of 3000 cycles

Published in:
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Date of Conference: 4-8 June 2006

Page(s):
1 - 4
Print ISBN:
0-7803-9714-2
INSPEC Accession Number:
9085851
Conference Location :
Naples
Digital Object Identifier :
10.1109/ISPSD.2006.1666118
Product Type:
Conference Publications

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