Cart (Loading....) | Create Account
Close category search window

Investigations of all lead free IGBT module structure with low thermal resistance and high reliability

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Nishimura, Y. ; Fuji Electr. Device Technol. Co., Ltd., Nagano ; Morozumi, A. ; Mochizuki, E. ; Takahashi, Y.

This paper presents all lead free IGBT module structure with low thermal resistance and high reliability. Using thick copper foil alumina DCB, Sn/Ag/In solder, and copper base, we have achieved low thermal resistance as same as the current aluminum nitride (AlN) IGBT module structure. In addition to low thermal resistance, this new structure shows excellent temperature cycling capability of 3000 cycles

Published in:

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Date of Conference:

4-8 June 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.