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An avalanche rugged NPT trench IGBT used in single-ended quasi resonant topology for induction heating appliance

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4 Author(s)
Kyu Hyun Lee ; Fairchild Semicond., Kyunggi, South Korea ; Kwang-Hoon Oh ; Young-Chul Kim ; Chong Man Yun

A 1000 V NPT (non-punch through) trench IGBT is developed for the single-ended quasi resonant circuit. Optimizing trench cell design and NPT technology, high avalanche ruggedness as well as the outstanding static and dynamic performances is obtained. Comparing the PT trench IGBT having the identical design and processes, it is also empirically shown that the developed NPT trench IGBT has significantly improved avalanche capability under the various test conditions for the IH application using the quasi resonant topology and reduces the instantaneous device failures resulting from inadequate avalanche ruggedness under abnormal operating condition

Published in:

Power Electronics and Applications, 2005 European Conference on

Date of Conference:

11-14 Sept. 2005