Referenced Items are not available for this document.
A 1000 V NPT (non-punch through) trench IGBT is developed for the single-ended quasi resonant circuit. Optimizing trench cell design and NPT technology, high avalanche ruggedness as well as the outstanding static and dynamic performances is obtained. Comparing the PT trench IGBT having the identical design and processes, it is also empirically shown that the developed NPT trench IGBT has significantly improved avalanche capability under the various test conditions for the IH application using the quasi resonant topology and reduces the instantaneous device failures resulting from inadequate avalanche ruggedness under abnormal operating condition
Published in:
Power Electronics and Applications, 2005 European Conference on
Date of Conference: 0-0 0
- Page(s):
- 9 pp. - P.9
- Print ISBN:
- 90-75815-09-3
- INSPEC Accession Number:
- 9046263
- Conference Location :
- Dresden
- Digital Object Identifier :
- 10.1109/EPE.2005.219739
- Product Type:
- Conference Publications
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