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High-temperature integration of silicon carbide (SiC) and silicon-on-insulator (SOI) electronics in multichip power modules (MCPMs)

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8 Author(s)
Hornberger, J. ; Arkansas Power Electron. Int. Inc., Fayetteville, AR ; Mounce, S. ; Schupbach, R. ; McPherson, B.
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Arkansas Power Electronics International, Inc, (APEI, Inc.) and University of Arkansas researchers have developed a novel, highly miniaturized motor drive capable of operation in excess of 250 degC. The high-temperature multichip power module (MCPM) integrates silicon carbide (SiC) JFET power transistors with high-temperature MOS silicon-on-insulator (SOI) control electronics into a single, highly miniaturized and compact power package. This paper outlines the design philosophy behind the high-temperature MCPM, discuss the high-temperature packaging technologies (including substrate selection, wirebonding, and die attach) developed and employed for module fabrication, illustrate thermal modeling results of the package, and present the results of prototype testing (demonstrating functionality)

Published in:

Power Electronics and Applications, 2005 European Conference on

Date of Conference:

11-14 Sept. 2005