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Carrier lifetime measurement in semiconductor lasers using injection current pulses of Gaussian shape

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3 Author(s)
A. M. Kusters ; Inst. fuer Halbleitertech., RWTH Aachen, Germany ; M. Glade ; K. Heime

The transient optical response of InGaAsP-InP double heterostructure (DH) and InGaAs-InGaAsP separate confinement multiple quantum-well (SC-MQW) lasers emitting at 1.3 μm has been measured using injection current pulses up to 1.5 A of Gaussian shape supplied by an avalanche generator. The method is shown to apply even on broad-area Fabry-Perot cavity devices gives quick access on the dynamic characteristics of novel laser structures. The lasing continuity equation is solved for this type of injection pulse. The comparison of calculated and measured turn-on delay times yields a precise value of the effective carrier lifetime as applicable in very high-bit-rate digital transmission

Published in:

IEEE Journal of Quantum Electronics  (Volume:28 ,  Issue: 12 )