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Strain enhanced DC-RF performance of 0.13 μm nMOSFETs on flexible plastic substrate

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6 Author(s)
Chin, A. ; Dept. of Electron. Eng., Univ. Syst. of Taiwan, Hsinchu, Taiwan ; Kao, H.L. ; Kao, C.H. ; Liao, C.C.
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A 14.3% saturation current Id,sat improvement and 0.75 dB minimum noise figure (NFmin) at 10 GHz were measured by applying ∼0.7% tensile strain for 16 finger, 0.13 μm RF MOSFETs with thin-body (40 μm) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations.

Published in:

Electronics Letters  (Volume:42 ,  Issue: 14 )