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Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

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14 Author(s)
Endo, K. ; Nat. Inst. of Adv. Ind. Sci. & Technol. ; Noda, Shuichi ; Masahara, M. ; Kubota, Tomohiro
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A high aspect ratio and damage-free vertical ultrathin channel for a vertical-type double-gate MOSFET was fabricated by using low-energy neutral-beam etching (NBE). NBE can completely eliminate the charge build-up and photon-radiation damages caused by the plasma. The fabricated FinFETs realize a higher device performance (i.e., higher electron mobility) than that obtained by using a conventional reactive-ion etching. The improved mobility is well explained by the NB-etched atomically flat surface. These results strongly support the effectiveness of the NB technology for nanoscale CMOS fabrication

Published in:

Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 8 )

Date of Publication:

Aug. 2006

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