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Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

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7 Author(s)
Crupi, F. ; Dipt. di Elettronica, Informatica e Sistemistica, Calabria Univ. ; Srinivasan, P. ; Magnone, P. ; Simoen, E.
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The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-kappa gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-kappa layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 8 )

Date of Publication:

Aug. 2006

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