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An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications

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6 Author(s)
Bethoux, J.M. ; Inst. d''Electronique, de Microelectronique et de Nanotechnol., CNRS, Villeneuve d''Ascq ; Happy, H. ; Dambrine, G. ; Derycke, V.
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In this letter, the authors report on the high-frequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of single-wall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (|H21| 2) cutoff frequency (ft) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivable

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 8 )