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Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

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5 Author(s)
Ruonan Wang ; Dept. of Electron. Eng., Hong Kong Univ. of Sci. & Technol., China ; Yong Cai ; W. Tang ; K. M. Lau
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A planar-fabrication technology for integrating enhancement/depletion (E/D)-mode AlGaN/GaN high-electron mobility transistors (HEMTs) has been developed. The technology relies heavily on CF4 plasma treatment, which is used in two separate steps to achieve two objectives: 1) active device isolation and 2) threshold-voltage control for the enhancement-mode HEMT formation. Using the planar process, depletion- and enhancement-mode AlGaN/GaN HEMTs are integrated on the same chip, and a direct-coupled FET logic inverter is demonstrated. Compared with the devices fabricated by a standard mesa-etching technique, the HEMTs by a planar process have comparable dc and RF characteristics with no obvious difference in the device isolation. The device isolation by a plasma treatment remains the same after 400 degC annealing, indicating a good thermal stability. At a supply voltage (VDD) of 3.3 V, the E/D-mode inverters show an output swing of 2.85 V, with the logic-low and logic-high noise margins at 0.34 and 1.47 V, respectively

Published in:

IEEE Electron Device Letters  (Volume:27 ,  Issue: 8 )