By Topic

Leakage effects in metal-connected floating-gate circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
StJohn, I. ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA ; Fox, R.M.

Floating-gate circuits are useful in many analog applications, although controlling the charge stored on floating gates complicates such circuits. It has been observed that when floating poly gates are connected to metal layers, initial charge is eliminated during fabrication. This Brief presents an alternative to a previously published explanation for this effect. Experiments show that leakage through deposited inter-metal dielectrics is large enough at moderately elevated temperatures to significantly affect circuit operation. Simple modeling suggests that at temperatures typical of back-end integrated circuit processing, leakage would be large enough to rapidly discharge such floating gates.

Published in:

Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:53 ,  Issue: 7 )