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All-optical switch utilizing intersubband transition in GaN quantum wells

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3 Author(s)
Iizuka, N. ; Corporate Res. & Dev. Center, Toshiba Corp., Kawasaki ; Kaneko, Kei ; Suzuki, N.

Intersubband transition (ISBT) in GaN quantum wells (QWs) was investigated from the viewpoint of application to ultrafast all-optical switches. The effect of crystalline quality on the absorption saturation characteristics was examined and reduction of edge dislocations was found to be a crucial factor in decreasing operation energy. Then, the switching performance was investigated for devices with improved crystalline quality. Modulation of signal pulses with a pulse interval of less than 1 ps was confirmed. Another device displayed gate-switch operation with an extinction ratio of greater than 10 dB. Comparison of the absorption recovery process in both devices suggested that the process is strongly affected by the QW structure

Published in:

Quantum Electronics, IEEE Journal of  (Volume:42 ,  Issue: 8 )

Date of Publication:

Aug. 2006

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