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A chemically-selective microsensor for environmentally-sensitive pollutants realized with an interdigitated gate electrode field-effect transistor (IGEFET)

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2 Author(s)
Kolesar, Edward S. ; Air Force Inst. of Technol., Wright-Patterson AFB, Dayton, OH, USA ; Wiseman, J.M.

An IGEFET has been coupled with a chemically active, electron-beam evaporated copper phthalocyanine (CuPc) thin film to realize a gas-sensitive microsensor. The sensor can selectively detect parts-per-billion concentration levels of nitrogen dioxide (NO2 ) and diisopropyl methylphosphonate (DIMP). The sensor is excited with a voltage pulse, and the time- and frequency-domain responses are measured. The envelopes associated with the normalized difference Fourier transform magnitude frequency spectra reveal features which unambiguously distinguish the NO2 and DIMP challenge gas responses. The area beneath each response envelope can correspondingly be interpreted as the sensor's sensitivity for a specific challenge gas concentration

Published in:

Aerospace and Electronics Conference, 1991. NAECON 1991., Proceedings of the IEEE 1991 National

Date of Conference:

20-24 May 1991