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Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements

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7 Author(s)
J. -M. Bethoux ; CNRS UMR, Villeneuve d'Ascq, France ; H. Happy ; A. Siligaris ; G. Dambrine
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AC performances of carbon nanotube field-effect transistors (CNT-FETs) are analyzed by means of scattering parameters measurements. The active ac properties of CNT-FETs are clearly demonstrated up to 80 MHz and indications of active behavior are obtained up to 1 GHz. From these measurements, a small signal equivalent circuit is proposed and validated up to 10 MHz. The extraction procedure and the determination of the intrinsic ac elements of CNT-FETs are pointed out

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IEEE Transactions on Nanotechnology  (Volume:5 ,  Issue: 4 )