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RF components with high reliability and low loss by partial trench isolation of SOI-CMOS technology

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12 Author(s)
A. Furukawa ; Mitsubishi Electr. Corp., Hyogo, Japan ; Y. Hirano ; T. Ohnakado ; T. Ikeda
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This paper describes the experimental characteristics of RF components with layout and structural optimization, fabricated in 0.10-mum 1.2-V SOI-CMOS technology with partial trench isolation (PTI). ESD protection-grounded gate SOI-NMOSFETs achieve high reliability due to body-tied structure with PTI, and newly proposed ESD diodes also derive superior performance. Moreover, this technology offers a low loss RF switch and a broadband amplifier with low power consumption. These results are very promising for the fabrication of broadband RF integrated circuits

Published in:

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006

Date of Conference:

11-13 June 2006