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Physics and Electrical Characterization of Excimer Laser Crystallized Polysilicon TFTs

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5 Author(s)
Michalas, L. ; Dept. of Phys., Nat. & Kapodistrian Univ. of Athens ; Exarchos, M.A. ; Papaioannou, G.J. ; Kouvatsos, D.N.
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The electrical properties of polycrystalline silicon thin film transistors are investigated. Transfer and transient characteristics have been recorded versus temperature, in the linear operation regime. Basic parameters such as subthreshold swing, leakage current and drain current overshoot transient are found to stem from the same deep states thermally activated carrier generation mechanism

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Microelectronics, 2006 25th International Conference on

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