By Topic

PECVD Growth of Thick Silicon Oxynitride for On-Chip Optical Interconnects Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wong, C.K. ; Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon ; Wong, H. ; Kok, C.W. ; Chan, M.

Thick oxynitride films were prepared by plasma enhanced chemical vapor deposition (PECVD) with N2O, NH3 and SiH4 precursors. The composition and the bonding structure of the oxynitride films were investigated with Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Results showed that the silicon oxynitride deposited with gas flow rates of NH 4/N2O/SiH4 = 10/400/10 (sccm) has favorable properties for integrated waveguide applications. The refractive index of this layer is about 1.5 and the layer has comparative low densities of O-H and N-H bonds. The O-H bonds can be readily eliminated with high temperature annealing of the as-deposited film in nitrogen ambient. Annealing at temperature of 1000 degC or above which can significantly suppress both the N-H bonds and O-H bonds is preferred. Simple ridge type waveguide with cross-section of 3 mumtimes2.5 mum for the core layer (n = 1.57) was fabricated. This waveguide is able to transmit signal in either TE or TM mode and the number of mode is eight and the bending radius of the waveguide can be reduced to about 6 mum

Published in:

Microelectronics, 2006 25th International Conference on

Date of Conference:

0-0 0