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The fabrication and characteristics of 1.3-μm InGaAsP strain-compensated multiquantum well (SCMQW) buried heterostructure (BH) laser diodes (LDs) grown by selective metal-organic chemical vapor epitaxy on a patterned InP substrate are demonstrated. The photoluminescence (PL) of the SCMQW active region grown on the patterned grooves has a narrow full-width at half-maximum of ∼ 47 meV. The BH LDs exhibit a threshold current of 6.8 mA, a slope efficiency of 0.45 mW/mA, and a light output power exceeding 30 mW at 80 mA and 20°C. The maximum operating temperature is 120°C with a characteristic temperature of 72 K in 20°C-80°C. The 3-dB modulation bandwidth can be extended as far as 11.4 GHz under a bias level of 40 mA, and the back-to-back tests show a clear and symmetric eye diagram at 10 Gb/s with a PRBS of 231-1 word length and a peak-to-peak voltage of 1.08 V at 85°C. The average increase in operational current is smaller than 0.84% after the 1500-h aging test. The mean time of the BH LDs operated at 85°C to fail is calculated as 9×104 h. These BH LDs satisfy the reliability requirement for strict loop environment and 10-Gb Ethernet application without special hermetic packaging.