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A low gate bias model extraction technique for AlGaN/GaN HEMTs

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4 Author(s)
Guang Chen ; Dept. of Electr. & Comput. Eng., Illinois Univ. at Urbana-Champaign, Urbana, IL, USA ; V. Kumar ; R. S. Schwindt ; I. Adesida

The small-signal equivalent circuit of AlGaN/GaN high electron-mobility transistors is discussed. A new modeling procedure is introduced in this paper that does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. Simulated results show good agreement with measurements up to 40 GHz.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:54 ,  Issue: 7 )