By Topic

The Development of an Experimental Electron-Beam-Addressed Memory Module

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Kelly, J. ; Stanford Research Institute

The various technologies needed to build a successful electron-beam-addressed memory (EBAM) have been evolving for over a decade, and are now sufficiently established to build a viable, economical system. Recent work at SRI indicates that EBAM will be an important contender for low-cost, large memory systems with improved random-access capability, high reliability, and high data rates. This will be achieved in small volume and without the use of moving parts. The potential applications of such a mass memory system are widespread, ranging from direct drum and disk replacement to new systems with architectures that would take advantage of improved random access times and increased data rates.

Published in:

Computer  (Volume:8 ,  Issue: 2 )