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Effect of CH4 plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes

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13 Author(s)
M. Aimadeddine ; STMicroelectronics, Crolles ; V. Arnal ; D. Roy ; A. Farcy
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Patterning and ashing are known to be critical steps to the integration of porous ultra low-k dielectrics in interconnects, mainly due to low-k damage during these processes. In this paper, we investigate the impact of a new methane based ash chemistry on the sidewall modification of the porous dielectric. Physical and electrical characterizations of the integrated low-k evidence a sealing effect of CH4 plasma on dielectric sidewalls as well as a gain in reliability compared to other known plasma chemistries. The impact of CH 4 chemistry on leakage mechanism is also investigated

Published in:

2006 International Interconnect Technology Conference

Date of Conference:

5-7 June 2006